丝印：60R090F7；Package：PG-TO263-3；MOSFET 600V CoolMOS짧 CFD7 Power Transistor

MOSFET 600V CoolMOSª CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an opti

文件：1.26158 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R090F7；Package：PG-TO247-3；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.3803 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R090F7；Package：PG-HDSOP-10；600V CoolMOS??CFD7 Power Transistor

文件：1.04526 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R090F7；Package：PG-TO220-3；600V CoolMOS짧 CFD7 Power Transistor

文件：1.73195 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R090F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

文件：1.27645 Mbytes 页数：14 Pages

Infineon

英飞凌