丝印：039N15N5；Package：PG-HSOG-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.63257 Mbytes 页数：13 Pages

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英飞凌

OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance

\n优势:\n• High performance capability\n• High system reliability\n• High efficiency and lower EMI\n• Optimized board utilization\n• High thermal cycling on board performance;

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.74308 Mbytes 页数：13 Pages

Infineon

英飞凌

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TO-251AA-3

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英飞凌

上传：深圳市宇集芯电子有限公司

5000
N/A

5000

上传：深圳市亿智腾科技有限公司