英飞凌对谐振高功率拓扑结构的解答

\n优势:\n• 一流的硬换向强度\n• 谐振拓扑高可靠性\n• 高效与高易用性/性能的协调\n• 实现更高功率密度的解决方案;

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英飞凌

丝印：60R055F7；Package：PG-HDSOP-10；600V CoolMOS??CFD7 Power Transistor

文件：1.0726 Mbytes 页数：14 Pages

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英飞凌

MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Benefits • Excellent hard commutation rugg

文件：1.22532 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS짧 CFD7 Power Transistor

文件：1.3015 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.17309 Mbytes 页数：14 Pages

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英飞凌