丝印：65R029F7；Package：PG-HDSOP-22；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

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集成快速体二极管的 650 V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

\n优势:\n• Excellent hard-commutation ruggedness\n• Extra safety margin for designs with increased bus voltage\n• Enabling increased power density\n• Outstanding light-load efficiency in industrial SMPS applications\n• Improved full-load efficiency in industrial SMPS applications\n• Price competitiven;

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丝印：65A029F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

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650 V CoolMOS ™ CFD7A N 通道汽车 SJ 功率 MOSFET，采用 HDSOP-22 顶部冷却

\n优势:\n• Better utilization of PCB space\n• Highest reliability for automotive appl.\n• Optimized power loop\n• Decoupling of thermals from substrate\n• Enabling of higher power density designs\n• Scalable for use in PFC and DC-DC stage\n• Granular portfolio available;

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