英飞凌对谐振高功率拓扑的回答

\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topologies\n• Highest efficiency with outstanding ease-of-use/performance trade-off\n• Enabling increased power density solutions;

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英飞凌

丝印：60R145F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

文件：1.27348 Mbytes 页数：14 Pages

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英飞凌

MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.35106 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS짧 CFD7 Power Device

文件：1.11702 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS짧 CFD7 Power Transistor

文件：1.25072 Mbytes 页数：14 Pages

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英飞凌

600V CoolMOS짧 CFD7 Power Device

文件：1.02799 Mbytes 页数：14 Pages

Infineon

英飞凌