丝印：60R070F7；Package：PG-TO263-3；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.25691 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R070F7；Package：PG-TO247-3；600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

文件：1.39023 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R070F7；Package：PG-TO220-3；600V CoolMOS짧 CFD7 Power Transistor

文件：1.73157 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

文件：1.39023 Mbytes 页数：14 Pages

Infineon

英飞凌