丝印：60R024C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.21517 Mbytes 页数：16 Pages

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英飞凌

丝印：60R024C8；Package：PG-HSOF-8；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.35096 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R024C8；Package：PG-TO247-3；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.12544 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：60R024C8；Package：PG-TO247-4；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.02222 Mbytes 页数：16 Pages

Infineon

英飞凌