丝印：60R024C8；Package：PG-TO247-4；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.02222 Mbytes 页数：16 Pages

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600 V CoolMOS ™ 8 功率晶体管

600 V CoolMOS™ 8 power transistor • Best-in-class RDS(on)*A\n• Significant reduction of losses\n• Excellent commutation ruggedness\n• Integrated fast body diode\n• .XT interconnection\n• ESD protection\n\n优势:\n• Increased power density\n• Ease of use and fast design-in\n• Low ringing tendency\n• Simplified thermal management\n• Simp;

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英飞凌

MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.21517 Mbytes 页数：16 Pages

INFINEON

英飞凌

MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.35096 Mbytes 页数：16 Pages

INFINEON

英飞凌

MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.12544 Mbytes 页数：15 Pages

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