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IPDQ60R016CM8

Marking:60R016C8;Package:PG-HDSOP-22;MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP60R016CM8

Marking:60R016C8;Package:PG-TO220-3;MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPT60R016CM8

Marking:60R016C8;Package:PG-HSOF-8;MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R016CM8

Marking:60R016C8;Package:PG-TO247-3;MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPZA60R016CM8

Marking:60R016C8;Package:PG-TO247-4;MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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