丝印：NCE60P45AK；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P45AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-45A RDS(ON)

文件：361.49 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P45K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P45K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-45A RDS(ON)

文件：451.73 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE60P50G；Package：DFN5X6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P50G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. Application ● High side switch for full bridge converter ● DC/DC converter for LCD display General Features

文件：632.07 Kbytes 页数：7 Pages

NCEPOWER

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P-channel Enhancement Mode Power MOSFET

Features VDS= -60V, ID= -50A RDS(ON)

文件：608.36 Kbytes 页数：4 Pages

BYCHIP

百域芯

丝印：NCE60P55K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-55A RDS(ON)

文件：669.98 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P65K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P65K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-65A RDS(ON)

文件：643.3 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P70D；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P70D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-70A RDS(ON)

文件：255.11 Kbytes 页数：5 Pages

NCEPOWER

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丝印：NCE60P70G；Package：DFN5X6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. Application ● High side switch for full bridge converter ● DC/DC converter for General Features ● VDS =-60V

文件：668 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P82A；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON)

文件：316.92 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P82AD；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON)

文件：329.82 Kbytes 页数：7 Pages

NCEPOWER

新洁能