丝印：NCE60P10K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-10A RDS(ON)

文件：767.55 Kbytes 页数：8 Pages

NCEPOWER

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丝印：NCE60P12AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-12A RDS(ON)

文件：450.72 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P12K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-12A RDS(ON)

文件：439.97 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P14K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-14A RDS(ON)

文件：793.75 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P16AK；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P16AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-16A RDS(ON)

文件：454.3 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P16AQ；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P16AQ uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ● Power management ● Load switch General Features ● VDS = -60V,ID = -16A RDS(ON)

文件：414.99 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P17AQ；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P17AQ uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ●Power management ●Load switch General Features ● VDS = -60V,ID = -17A RDS(ON)

文件：715.86 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P18AQ；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P18AQ uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ●Power management ●Load switch General Features ● VDS = -60V,ID = -18A RDS(ON)

文件：350.86 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P28AK；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-28A RDS(ON)

文件：388.61 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60P40F；Package：TO-220F；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P40F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-40A RDS(ON)

文件：287.48 Kbytes 页数：7 Pages

NCEPOWER

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