丝印：NCE60P06S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-6A RDS(ON)

文件：318.44 Kbytes 页数：7 Pages

NCEPOWER

新洁能

P沟道 MOSFET

NCEPower

新洁能

25A?? 60V, 0.030 Ohm, P-Channel Power MOSFET

文件：88.87 Kbytes 页数：8 Pages

INTERSIL

60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulato

文件：65.36 Kbytes 页数：7 Pages

INTERSIL

60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulato

文件：380.31 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体