60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulato

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60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulato

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INTERSIL

60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators • 60A, 60V\n• rDS(ON) = 0.030Ω\n• Temperature Compensating PSPICE® Model\n• 2kV ESD Rated\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• 175°C Operating Temperature\n• Related Literature;

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60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators • 60A, 60V\n• rDS(ON) = 0.030Ω\n• Temperature Compensating PSPICE® Model\n• 2kV ESD Rated\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• 175°C Operating Temperature\n• Related Literature;

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