12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These

文件：40.37 Kbytes 页数：5 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.42 Kbytes 页数：2 Pages

ISC

无锡固电

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：31.37 Kbytes 页数：4 Pages

INTERSIL

12A, 400V N-CHANNEL POWER MOSFET

文件：164.72 Kbytes 页数：4 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：218.79 Kbytes 页数：7 Pages

UTC

友顺

400V,11A N-Channel MOSFET

General Description The AOT12N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adop

文件：311.53 Kbytes 页数：5 Pages

AOSMD

万国半导体