isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.21 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOS Field-Effect Transistors

文件：86.22 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

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ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

NJS