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30N06

30Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

30Amps,60VoltsN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

30N06

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

30N06

60V,30AN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06

60VN-ChannelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

UMWUMW

友台友台半导体

30N06.

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06B

25A竊?0VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

30N06L

30Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06-Q

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06V-Q

N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR

DESCRIPTION TheUTC30N06V-QisalowvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

FQB30N06

60VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB30N06L

60VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06L

N-ChannelQFET짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06LTM

N-ChannelQFET짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD30N06

60VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    RFIS30N06LESM

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

供应商型号品牌批号封装库存备注价格
HAR
23+
RFIS30N06LES
13528
振宏微原装正品,假一罚百
询价
HARRIS(哈利斯)
20+
-
3000
询价
HARRIS
24+25+/26+27+
车规-晶体管
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
HARRIS(哈利斯)
23+
6000
询价
仙童
05+
TO-263
3500
原装进口
询价
5000
公司存货
询价
HAR
2021+
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
哈理斯
TO-263
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
HARRIS/哈里斯
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
INEINEON
21+
TO-263
50000
全新原装正品现货,支持订货
询价
更多RFIS30N06LESM供应商 更新时间2024-5-1 17:00:00