1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a

文件：29.9 Kbytes 页数：5 Pages

Intersil

1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS

NJS

Nch 80V 235A Power MOSFET

Features 1) Low on - resistance 2) High power mold package 　　(TO263AB) 3) Pb-free plating ; RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested Application Switching Motor drives DC/DC converter

文件：2.54298 Mbytes 页数：13 Pages

ROHM

罗姆

chip fuse

文件：214.22 Kbytes 页数：2 Pages

KOA

chip fuse

文件：214.22 Kbytes 页数：2 Pages

KOA

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 4.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：202.03 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技