isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：270.9 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL ENHANCEMENT-MODE

文件：676.83 Kbytes 页数：12 Pages

GE

P-CHANNEL ENHANCEMENT-MODE

General Semiconductor

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.55 Kbytes 页数：2 Pages

ISC

无锡固电

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power

文件：37 Kbytes 页数：5 Pages

INTERSIL