P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]

文件：445.58 Kbytes 页数：8 Pages

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：247.9 Kbytes 页数：2 Pages

ISC

无锡固电

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]

文件：445.58 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046. Features

文件：310.39 Kbytes 页数：5 Pages

INTERSIL

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.75 Kbytes 页数：2 Pages

ISC

无锡固电