-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046. Features

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INTERSIL

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]

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ETCList of Unclassifed Manufacturers

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

P-Channel Enhancement Mode Power MOSFET

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KERSEMI

P-Channel Enhancement Mode Power MOSFET

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HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -6A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.66Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

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ISC

无锡固电