isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.18 Kbytes 页数：2 Pages

ISC

无锡固电

8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxi

文件：97.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxi

文件：38.9 Kbytes 页数：5 Pages

INTERSIL

N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS

文件：232.26 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB

NJS

新泽西半导体