丝印：D6P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：729.56 Kbytes 页数：5 Pages

KERSEMI

丝印：D6P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：986.23 Kbytes 页数：5 Pages

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -6A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.66Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

文件：346.01 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：261.769 Kbytes 页数：10 Pages

Motorola

摩托罗拉

P?묬hannel DPAK Power MOSFET

文件：212.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体