MTD6P10

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=-6A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

MTD6P10E

TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

MTD6P10ET4

P-Channel 100 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSwitch •DC/DCConverters

MTD6P10E

P?묬hannel DPAK Power MOSFET

MTD6P10EG

P?묬hannel DPAK Power MOSFET

MTD6P10ET4

P?묬hannel DPAK Power MOSFET

MTD6P10ET4G

P?묬hannel DPAK Power MOSFET

HLDD6P10

P-ChannelEnhancementModePowerMOSFET

HLDD6P10

P-ChannelEnhancementModePowerMOSFET

RFM6P10

PCHANNELENHANCEMENTMODEPOWERFIELDEFFECTTRANSISTORS

[GESOLIDSTATE]

RFP6P10

PCHANNELENHANCEMENTMODEPOWERFIELDEFFECTTRANSISTORS

[GESOLIDSTATE]

RFP6P10

-6A,-80Vand-100V,0.600Ohm,P-ChannelPowerMOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforhighspeedapplicationssuchasswitchingregulators,switchingconvertors,relaydrivers,anddriversforhighpowerbipolarswitchingtransistors. FormerlydevelopmentaltypeTA09046. Features