70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：90.46 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：71.22 Kbytes 页数：8 Pages

INTERSIL

70A,60V Heatsink Planar N-Channel Power MOSFET

文件：1.74386 Mbytes 页数：7 Pages

THINKISEMI

思祁半导体

N-Channel 60-V (D-S) MOSFET

文件：979.43 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N 沟道，功率 MOSFET，60V，70A，14mΩ

这些N沟道逻辑电平功率MOSFET使用MegaFET工艺制造。 这种工艺使用接近LSI集成电路的特征尺寸，优化了硅原料利用率，可以带来出色的性能。 这些器件设计用于开关稳压器、开关转换器、电机驱动和继电器驱动器等应用。 此类晶体管可以直接通过集成电路运行。 以前的开发类型为TA78440。 •70A, 60V\n•rDS(ON)= 0.014Ω\n•温度补偿式PSPICE®模型\n•峰值电流与脉宽曲线\n•UIS等级曲线（单脉冲）\n•175°C工作温度\n•相关文献;

ONSEMI

安森美半导体