8A, 100V, 0.400 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These ty

文件：40.9 Kbytes 页数：5 Pages

INTERSIL

-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These ty

文件：279.17 Kbytes 页数：5 Pages

HARRIS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.6 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 100 V (D-S) MOSFET

文件：966.94 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

8A, 100V, 0.400 Ohm, P-Channel Power MOSFET

Renesas

瑞萨

Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB

NJS

新泽西半导体