零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
EMBA1N10Q | N?륝hannel Logic Level Enhancement Mode Field Effect Transistor ProductSummary: BVDSS100V RDSON(MAX.)110mΩ ID4.5A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | |
chipfuse | KOA KOA SPEER ELECTRONICS, INC. | KOA | ||
chipfuse | KOA KOA SPEER ELECTRONICS, INC. | KOA | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS100V RDSON(MAX.)110mΩ ID15A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS100V RDSON(MAX.)110mΩ ID15A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
MEDIUMPOWERTMOSFET1AMP100VOLTS MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdevicealsooffersadrain–to– | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
MEDIUMPOWERTMOSFET1AMP100VOLTS MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdevicealsooffersadrain–to– | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
1A,80Vand100V,1.200Ohm,N-Channel,PowerMOSFETs Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-Channel,PowerMOSFETs Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
1A,100V,1.200Ohm,LogicLevel,N-ChannelPowerMOSFET Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistorspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedthrougha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
EMC杰力 |
23+ |
SOT-223 |
86764 |
原装正品现货 |
询价 | ||
23+ |
N/A |
35700 |
正品授权货源可靠 |
询价 | |||
EMC |
20+ |
SOT-223 |
43000 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
EMC |
1925+ |
SOT-223 |
12500 |
原装现货价格优势可供更多可出样 |
询价 | ||
EMC杰力 |
23+ |
SOT-223 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
EMC杰力 |
2022+ |
SOT-223 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
EMC杰力 |
SOT-223 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
EMC杰力 |
23+ |
NA/ |
15320 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
EMC |
22+ |
SOT-223 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
EMC-义隆 |
24+25+/26+27+ |
SOT-223 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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