N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–

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MOTOROLA

摩托罗拉

MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–

文件：236.4 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a

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INTERSIL