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MMFT1N10

MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–

文件:236.4 Kbytes 页数:10 Pages

Motorola

摩托罗拉

MMFT1N10

MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

恩XP

恩智浦

恩XP

MMFT1N10E

MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–

文件:236.4 Kbytes 页数:10 Pages

Motorola

摩托罗拉

RFL1N10

N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件:148.22 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFL1N10

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件:96.15 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFL1N10

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件:30.55 Kbytes 页数:4 Pages

Intersil

详细参数

  • 型号:

    MMFT1N10

  • 制造商:

    MOTOROLA

  • 制造商全称:

    Motorola, Inc

  • 功能描述:

    MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

供应商型号品牌批号封装库存备注价格
MOTOROLA/摩托罗拉
24+
TO-223
10000
只做原厂渠道 可追溯货源
询价
FUJITSU/富士通
23+
TO-220AB
69820
终端可以免费供样,支持BOM配单!
询价
MOTO
08+
TO-223
10000
普通
询价
MOTOROLA/摩托罗拉
2022+
TO-223
10000
原厂代理 终端免费提供样品
询价
MOTOROLA/摩托罗拉
2022+
TO-223
30000
进口原装现货供应,绝对原装 假一罚十
询价
MOTOROLA/摩托罗拉
20+
TO-223
32500
现货很近!原厂很远!只做原装
询价
MOTO
24+
TO-223
35200
一级代理/放心采购
询价
24+
5000
公司存货
询价
MOT
05+
原厂原装
551
只做全新原装真实现货供应
询价
EVOX
24+
原厂封装
9900
原装现货假一罚十
询价
更多MMFT1N10供应商 更新时间2025-10-8 16:36:00