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MMFT1N10E

MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdevicealsooffersadrain–to–

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

RFL1N10

N-Channel,PowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFL1N10

1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFL1N10

1A,80Vand100V,1.200Ohm,N-Channel,PowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

Intersil

Intersil Corporation

RFL1N10L

1A,100V,1.200Ohm,LogicLevel,N-ChannelPowerMOSFET

Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistorspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedthrougha

Intersil

Intersil Corporation

RJ1N10BBH

Nch80V235APowerMOSFET

Features 1)Lowon-resistance 2)Highpowermoldpackage (TO263AB) 3)Pb-freeplating;RoHScompliant 4)HalogenFree 5)100%RgandUIStested Application Switching Motordrives DC/DCconverter

ROHMRohm

罗姆罗姆半导体集团

详细参数

  • 型号:

    MMFT1N10E

  • 制造商:

    MOTOROLA

  • 制造商全称:

    Motorola, Inc

  • 功能描述:

    MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
SOT-223
5000
只做原厂渠道 可追溯货源
询价
ON
24+
SOT223
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ON
23+
SOT-223
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON
23+
SOT-223
30000
代理全新原装现货,价格优势
询价
ON/安森美
23+
SOT-223
24190
原装正品代理渠道价格优势
询价
ON
08+
SOT-223
5000
普通
询价
ON/安森美
21+
SOT-223
30000
优势供应 实单必成 可13点增值税
询价
ON/安森美
2022+
SOT-223
2000
原厂代理 终端免费提供样品
询价
ON
18+
SOT-223
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON
23+
SOT-223
2000
正规渠道,只有原装!
询价
更多MMFT1N10E供应商 更新时间2025-6-5 16:36:00