1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件：30.55 Kbytes 页数：4 Pages

Intersil

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件：96.15 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件：148.22 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS

NJS

1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a

文件：29.9 Kbytes 页数：5 Pages

Intersil

1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS

NJS