RFL1N20L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFL1N18LandRFL1N20LandtheRFP2N18LandRFP2N20Laren-channelenhancement-modesilicon-gatepower,field-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesInapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.

RFL1N20L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

D1N20

GeneralPurposeRectifiers(200V1A)

FEATURES ●Highvoltage ●Highreliabilitywithsuperiormoistureresistance ●5mmpitchmountingapplicable APPLICATION ●ConventionalRectification ●Powersource(PowerSupply) ●HomeAppliances,OfficeEquipment ●Telecommunication,FactoryAutomation

N1N20

N-channel200V,1.2Ω,1A,SOT-223MESHOVERLAY™PowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFET developedusingthelatesthighvoltageMESH OVERLAY™process.ThenewpatentedSTrip layoutcoupledwiththecompany’sproprietary edgeterminationstructure,makesitsuitablein convertersforlightingapplications. Features ■100a

RFL1N20

1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

RFL1N20

1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

SST1N20-C

N-ChEnhancementModePowerMOSFET

STN1N20

N-channel200V,1.2Ω,1A,SOT-223MESHOVERLAY™PowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFET developedusingthelatesthighvoltageMESH OVERLAY™process.ThenewpatentedSTrip layoutcoupledwiththecompany’sproprietary edgeterminationstructure,makesitsuitablein convertersforlightingapplications. Features ■100a

STN1N20

N-CHANNEL200V-1.2ohm-1A-SOT-223POWERMOSTRANSISTOR

N-CHANNEL200V-1.2Ω-1A-SOT-223POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDI