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RFM12	文件：485.33 Kbytes Page：10 Pages	UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE Features •Lowcosting,highperformanceandpriceratio •Tuningfreeduringproduction •PLLandzeroIFtechnology •FastPLLlocktime •HighresolutionPLLwith2.5KHzstep •Highdatarate(upto115.2kbpswithinternaldemodulator，withexternalRCfilterhighestdatarateis 256kb	HOPEHOPE Microelectronics CO., Ltd. 华普微深圳市华普微电子股份有限公司	HOPE
RFM12N08	文件：43.2 Kbytes Page：5 Pages	12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	Intersil Intersil Corporation	Intersil
RFM12N08	文件：99.52 Kbytes Page：2 Pages	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
RFM12N08	文件：99.52 Kbytes Page：2 Pages	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
RFM12N08L	文件：101.13 Kbytes Page：2 Pages	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
RFM12N10	文件：43.2 Kbytes Page：5 Pages	12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	Intersil Intersil Corporation	Intersil
RFM12N10	文件：99.52 Kbytes Page：2 Pages	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
RFM12N10	文件：99.52 Kbytes Page：2 Pages	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
RFM12N10L	文件：101.13 Kbytes Page：2 Pages	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
RFM12N18	文件：35.64 Kbytes Page：4 Pages	12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv	Intersil Intersil Corporation	Intersil

技术参数

Minimum Operating Temperature：
-55°C
Maximum Power Dissipation：
75000mW
Maximum Operating Temperature：
150°C
Maximum Gate Source Voltage：
±20V
Maximum Drain Source Voltage：
80V
Maximum Continuous Drain Current：
12A
Material：
Si
Configuration：
Single
Channel Type：
N
Channel Mode：
Enhancement
Category：
Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	RFM12P10	HARRIS	23+	2脚铁帽	5000	原装正品,假一罚十	询价
深圳市一线半导体有限公司	RFM12N40		24+	N/A	2150		询价
深圳市永贝尔科技有限公司	RFM12P08	GE	23+	NA	39960	只做进口原装,终端工厂免费送样	询价
千层芯半导体(深圳)有限公司	RFM12B-433-S1	HOPE	24+	SMD	20000	一级代理原装现货假一罚十	询价
深圳市振宏微科技有限公司	RFM12U7X	SMD	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	RFM12B-433-S1	HOPE	1844+	模块	9852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市昊创电子有限公司	RFM12P10	NA		TO3	1649	专营CAN铁帽仔	询价
中天科工半导体（深圳）有限公司	RFM12N08	HAR	专业铁帽	TO-3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市粤骏腾电子科技有限公司	RFM12B-433-S1	HOPE	24+	MODULEFSK	100	大批量供应优势库存热卖	询价
艾睿（深圳）半导体有限公司	RFM12N08L	HARRIS	2447	TO-3	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多RFM12供应商更新时间2025-7-28 15:52:00

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