RFM12N08规格书应用电路批发采购无锡固电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RFM12N08	文件：43.2 Kbytes Page：5 Pages	12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These 文件：43.2 Kbytes 页数：5 Pages	INTERSIL	INTERSIL
RFM12N08	文件：285.04 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：285.04 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
RFM12N08	文件：99.52 Kbytes Page：2 Pages	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These 文件：99.52 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N08	文件：99.52 Kbytes Page：2 Pages	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These 文件：99.52 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N08	文件：300 bytes Page：1 Pages	Trans MOSFET N-CH 80V 12A	NJS	NJS
RFM12N08L	文件：101.13 Kbytes Page：2 Pages	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver 文件：101.13 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N08L	文件：285.06 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：285.06 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
RFM12N08L	文件：300 bytes Page：1 Pages	Trans MOSFET N-CH 80V 12A	NJS	NJS

技术参数

Minimum Operating Temperature：
-55°C
Maximum Power Dissipation：
75000mW
Maximum Operating Temperature：
150°C
Maximum Gate Source Voltage：
±20V
Maximum Drain Source Voltage：
80V
Maximum Continuous Drain Current：
12A
Material：
Si
Configuration：
Single
Channel Type：
N
Channel Mode：
Enhancement
Category：
Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	RFM12N08		24+	N/A	3110		询价
中天科工半导体（深圳）有限公司	RFM12N08	HAR	专业铁帽	TO-3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市晨豪科技有限公司	RFM12N08	HARRIS	23+	TO-3	89630	当天发货全新原装现货	询价
艾睿（深圳）半导体有限公司	RFM12N08L	HARRIS	2447	TO-3	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
贸泽芯城（深圳）电子科技有限公司	RFM12N10	RCA	23+	TO-204	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
现代芯城（深圳）科技有限公司	RFM12N10		24+	N/A	72000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市星宇佳科技有限公司	RFM12P08	HARRIS(哈利斯)	20+	TO-3	3000		询价
深圳市亿芯隆邦电子有限公司	RFM12P08	Harris Corporation	25+	TO-3	860000	只做原厂原装正品	询价
齐创科技(上海,北京,青岛)有限公司	RFM12P10	HARRIS	23+	2脚铁帽	5000	原装正品,假一罚十	询价
深圳市昊创电子有限公司	RFM12P10	NA		TO3	1649	专营CAN铁帽仔	询价

更多RFM12N08供应商更新时间2026-2-2 14:01:00

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