RFM12N08L中文资料新泽西半导体数据手册PDF规格书

The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control directly from logic circuit supply voltages

Features:

■ Design optimized tor5 volt gate drive

■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits

■ Compatible with automotive drive requirements

■ SOA is power-dissipation limited

■ Nanosecond switching speeds

■ Linear transfer characteristics

■ High input impedance

■ Majority carrier device