丝印：1N20；Package：SOT-26；N-Ch Enhancement Mode Power MOSFET

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SECOS

喜可士

MosFET

Secos

喜可士

N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

文件：515.2 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR

N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLEIN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DI

文件：45.44 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体