Field Effect Transistor Silicon N Channel MOS Type

VHF- and UHF-band Amplifier Applications (Note) The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed i

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Radio-frequency power MOSFET

Application Scope：UHF/VHF band professional radio (520MHz)\nPolarity：N-ch\nRoHS Compatible Product(s) (#)：Available Drain current ID 2.5 A \nPower Dissipation PD 7 W \nDrain-Source voltage VDSS 16 V ;

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Field Effect Transistors Silicon N-Channel MOS

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