Radio-frequency power MOSFET

Application Scope：FRS/GMRS(470MHz)\nPolarity：N-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 2.5 A \nPower Dissipation PD 7 W \nDrain-Source voltage VDSS 16 V ;

Toshiba

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丝印：WG；Package：PW-Mini；Field Effect Transistors Silicon N-Channel MOS

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Mechanical Cam Switches

BNS 819-B06-D08-46-11-FC Basic features Approval/Conformity CE UKCA CCC WEEE Basic standard IEC 60947-5-1 Operating principle 1-6. Switch position: Mechanical Version Snap contact

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Balluff

巴鲁夫

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Field Effect Transistor Silicon N Channel MOS Type

VHF- and UHF-band Amplifier Applications (Note) The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed i

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