10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS

NJS

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件：89.46 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件：89.46 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：211.91 Kbytes 页数：4 Pages

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