零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
10A,150V,0.3廓,N-CHANNELPOWERMOSFETS | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
POWERFIELDEFFECTTRANSISTOR
| MotorolaMotorola, Inc 摩托罗拉 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESSGE Solid State GE Solid State | |||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-ChannelEnhancement-ModePowerField-EffectTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESSGE Solid State GE Solid State | |||
10A,150V,0.300Ohm,N-ChannelPowerMOSFETs Features ●10A,120Vand150V ●rDS(on)=0.3Ω ●SOAisPower-DissipationLimited ●NanosecondSwitchingSpeeds ●LinearTransferCharacteristics ●HighInputImpedance ●MajorityCarrierDevice | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |
详细参数
- 型号:
RFM10N15L
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
N/A |
2860 |
询价 | |||||
isc |
2024 |
TO-3 |
10000 |
国产品牌isc,可替代原装 |
询价 | ||
HARRIS(哈利斯) |
20+ |
TO-3 |
3000 |
询价 | |||
MOSPEC |
1635+ |
92 |
6000 |
好渠道!好价格!一片起卖! |
询价 | ||
MOSPEC |
20+ |
TO-3 |
35830 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
MOSPEC |
2023+ |
TO-3 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MOSPEC |
21+ |
TO-3 |
35210 |
一级代理/放心采购 |
询价 | ||
HARRIS |
2020+ |
N/A |
174 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
HARRIS |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
HARRIS |
23+ |
178 |
原装现货!品质为先!请来电垂询! |
询价 |
相关规格书
更多- RFM10N45
- RFM10P12
- RFM12
- RFM12-433-D/S
- RFM12B-433-S1
- RFM12B-868-S1
- RFM12N10
- RFM12N40
- RFM12P10
- RFM12U7X(TE12L,Q)
- RFM14Z
- RFM15N05L
- RFM15N06L
- RFM15N15
- RFM168ZA
- RFM173ZA
- RFM181ZA
- RFM1842-10
- RFM187ZA
- RFM189ZA
- RFM18N10
- RFM1950-10
- RFM1ZA
- RFM20A04L
- RFM20A06L
- RFM20A4
- RFM2140-10
- RFM21C3
- RFM22-433-D
- RFM22B
- RFM22B-868-D
- RFM22W-1D28
- RFM25N05
- RFM26W-1D28
- RFM31-433-D
- RFM31B
- RFM31B-868-D
- RFM3N45
- RF-M4
- RF-M4-1
- RFM-42
- RFM42B-868-S1
- RFM5P12
- RFM6N45
- RFM6P08
相关库存
更多- RFM10N50
- RFM10P15
- RFM12-433-D
- RFM12B-433-D
- RFM12B-868-D
- RFM12B-DEMO
- RFM12N35
- RFM12P08
- RFM12U7X
- RFM13ZA
- RFM15N05
- RFM15N06
- RFM15N12
- RFM163ZA
- RFM170ZA
- RFM1765-10
- RFM183ZA
- RFM1855-10
- RFM1880-10
- RFM18N08
- RFM18ZA
- RFM195ZA
- RFM20A04
- RFM20A06
- RFM20A08
- RFM20W1D28
- RFM-2160-35-27M
- RFM22
- RFM22-868-S1
- RFM22B-433-D
- RFM22B-868-S1
- RFM23
- RFM25N06
- RFM31
- RFM31-868-S1
- RFM31B-433-D
- RFM31B-868-S1
- RFM3N50
- RFM400-3
- RF-M4-2
- RFM42B-868-D
- RFM4N40
- RFM5P15
- RFM6N50
- RFM6P10