RFG60P06E中文资料60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET数据手册ONSEMI规格书
RFG60P06E规格书详情
描述 Description
The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.
特性 Features
• 60A, 60V
• rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE® Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
• Related Literature
技术参数
- 型号：
RFG60P06E
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
114 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-3P |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
INTERSIL/FSC |
23+ |
TO-247 |
28610 |
询价 | |||
HARRIS |
25+ |
TO3P |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
HARRIS哈里斯 |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
询价 | ||
HAR |
23+ |
RFG70N06 |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
FAIRCHILD/仙童 |
20+ |
TO-247 |
67500 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
24+ |
N/A |
3200 |
询价 | ||||
FSC/INF/H |
17+ |
TO-247 |
6200 |
询价 | |||
FAIRCHILD/仙童 |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
询价 |
