RFG50N069A数据手册ONSEMI中文资料规格书

描述 Description

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49018.

特性 Features

• 50A, 60V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature