| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NCE60H10K | 丝印：NCE60H10K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON) 文件：622.2 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | |
NCE60H10K | 12-200V N-Channel Trench MOSFET | NCEPower 新洁能 | NCEPower | |
Single N?묬hannel Power MOSFET 文件：759.06 Kbytes 页数：7 Pages | PJSEMI 平晶半导体 | PJSEMI | ||
N-Channel 60 V (D-S) MOSFET 文件：994.81 Kbytes 页数：7 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：398.44 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON) 文件：611.83 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER |
技术参数
- Product status：
Production
- Package：
TO-252
- Polarity：
P
- BVDSS(V)：
60
- ID(A)：
100
- VTH(V)：
3
- RDS(ON)@10VTyp(mΩ)：
4.2
- RDS(ON)@10VMax(mΩ)：
5.4
- VGS(th)(V)：
±20
- CISS(pF)：
5200
- QG(nC)：
97.5
- PD(W)：
150
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE |
M15,CMRz4,C |
TO-252 |
25000 |
原装现货17377264928微信同号 |
询价 | ||
NCE |
23+ |
TO-252-2L |
2550 |
原装现货实单支持 |
询价 | ||
NCE |
25+ |
TO-252-2L |
20000 |
原装正品价格优惠,志同道合共谋发展 |
询价 | ||
NCE新洁能 |
23+ |
35375 |
绝对原装正品/真实库存/绝无虚假/支持送货 |
询价 | |||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
NCE POWER |
2424 |
con |
100 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
NCE POWER |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
NCE |
24+ |
TO-252 |
2500 |
只做原装正品现货欢迎来电查询15919825718 |
询价 | ||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
询价 | ||
NCE/新洁能 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 |
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