丝印：NCE6005AR；Package：SOT-223-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

文件：678.79 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE6005AS；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

文件：664.64 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6007；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)

文件：431.63 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6009XS；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6009XS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =9A RDS(ON)

文件：608.79 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6010J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6010J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =10A RDS(ON)

文件：293.72 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6012AS；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON)

文件：803.89 Kbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE6012CS；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6012CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON)

文件：333.72 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：692.65 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020A；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：754.99 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020AL；Package：TO-251S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：678.45 Kbytes 页数：7 Pages

NCEPOWER

新洁能