丝印：NCE6020A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：692.65 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE6020A；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：754.99 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE6020AL；Package：TO-251S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：678.45 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE6020AQ；Package：DFN3.3X3.-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description he NCE6020AQ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

文件：716.17 Kbytes 页数：7 Pages

NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

文件：463.54 Kbytes 页数：7 Pages

NCEPOWER

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12-200V N-Channel Trench MOSFET

NCEPower

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丝印：NCE6020AK；Package：TO-252-2L；LCE P-Channel Enhancement Mode Power MOSFET

文件：1.26605 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCE6020AK；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：1.43551 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

12-200V N-Channel Trench MOSFET

The NCE6020AK uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. • V DS =60V,I D =20AR DS(ON) <35m? @ V GS =10VR DS(ON) <40m? @ V GS =4.5V• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Good stability and uniformity with high E AS• Excellent package for good heat dissipation• Special process technology for high E;

NCEPower

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12-200V N-Channel Trench MOSFET

\n The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. \n• VDS =60V,ID =20A\nRDS(ON) <35mΩ @ VGS=10V\nRDS(ON) <40mΩ @ VGS=4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high EAS\n• Excellent package for good heat dissipation\n• Special process technology for;

NCEPower

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