丝印：6007；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)

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NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE6007S uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =7A\nR DS(ON) < 30m? @ V GS =10V （Typ：24m?）\nR DS(ON) < 35m? @ V GS =4.5V （Typ：27m?）\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Low gate to drain charge to reduce switching losses;

NCEPower

新洁能

Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

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NTE

60AMp Glass Passivated Standard Rectifiers

文件：184.31 Kbytes 页数：3 Pages

FCI

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60Amp Glass Passivated Standard Rectifiers

文件：327.1 Kbytes 页数：3 Pages

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