丝印：NCE6005AR；Package：SOT-223-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

文件：678.79 Kbytes 页数：8 Pages

NCEPOWER

新洁能

N-Channel 60-V (D-S) MOSFET

文件：990.28 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

丝印：NCE6005AR；Package：SOT-223-3L；LCE N-Channel Enhancement Mode Power MOSFET

文件：1.12868 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCE6005AR；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

文件：1.14303 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

12-200V N-Channel Trench MOSFET

\n The NCE6005AR uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =5A\nR DS(ON) <35m? @ V GS =10V (Typ.26m?)\nR DS(ON) <45m? @ V GS =4.5V (Typ.32m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• ;

NCEPower

新洁能