LMTM5N06

Marking：NCE6005AR；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

MTD5N06

PowerFieldEffectTransistors

PowerFieldEffectTransistors N-ChannelEnhancementModeSiliconGate DPAKforSurfaceMountorInsertionMount

MTD5N06D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

MTD5N06I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

MTP5N06

N-CHANNELENHANCEMENTMODESILICONGATE

MTP5N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PJW5N06A

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@5A

PJW5N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@5A

SSPR5N06-C

N-ChannelEnhancementModePowerMOSFET