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LMTM6N10

Marking:NCE0106R;Package:SOT-223-3L;N-Channel Enhancement Mode Power MOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

MTD6N10

POWERFIELDEFFECTTRANSISTOR,N-CHANNELENHANCEMENT-MODESILICONGATE,DPAKFORSURFACEMOUNTORINSERTIONMOUNT

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate DPAKforSurfaceMountorInsertionMount ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrealydrivers.

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTD6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTD6N10E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTD6N10E

TMOSPOWERFET6.0AMPERES100VOLTSRDS(on)=0.400OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP6N10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD6N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.54Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP6N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.3A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.54Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
24+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
询价
23+
18+
12000
原装正品--可开增值税发票量大可订货
询价
原装
20+
原装
56200
原装优势主营型号-可开原型号增税票
询价
MURATA/村田
23+
SMD
50000
全新原装正品现货,支持订货
询价
MURATA
23+
SMD
50000
全新原装正品现货,支持订货
询价
MURATA
13+
SMD
50000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MURATA/村田
2023+
SMD
50000
专注全新正品,优势现货供应
询价
MURATA
23+
SMD
12800
公司只有原装 欢迎来电咨询。
询价
MURATA/村田
23+
SOP-8
89630
当天发货全新原装现货
询价
MURATA
23+
SMD
8560
受权代理!全新原装现货特价热卖!
询价
更多LMTM6N10供应商 更新时间2025-7-18 11:06:00