POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate DPAK for Surface Mount or Insertion Mount This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and realy drivers.

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Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

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ISC

无锡固电

POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

恩XP

TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

文件：211.53 Kbytes 页数：10 Pages

Motorola

摩托罗拉

Power Field Effect Transistor

文件：265.2 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

恩XP

Power Field Effect Transistor

ONSEMI

安森美半导体