丝印：6003M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)

文件：257.26 Kbytes 页数：7 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

丝印：6003M；Package：SOT-89-3L；LCE N-Channel Enhancement Mode Power MOSFET

文件：994.89 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子