丝印：6003XY；Package：SOT-23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：711.16 Kbytes 页数：7 Pages

NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：293.66 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

文件：503.1 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：3.15583 Mbytes 页数：8 Pages

KERSEMI